EPC2111
EPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGAN TRANS ASYMMETRICAL HALF BRID
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet EPC2111 Datasheet
-
ECAD Model
- Share
In Stock: 28,932
Can ship immediately
Pricing:
- 1$3.21
- 2,500$1.59981
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Half Bridge)
- FET Feature:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:16A (Ta)
- Rds On (Max) @ Id, Vgs:19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 5V, 5.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:230pF @ 15V, 590pF @ 15V
- Power - Max:-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
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