MJD200T4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER BIPOLAR TRANSISTOR, 5A, 25
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet MJD200T4G Datasheet
-
ECAD Model
- Share
In Stock: 28,428
Can ship immediately
Pricing:
- 1$0.18
- 2,500$0.06487
- 5,000$0.0609
- 12,500$0.05694
- 25,000$0.05628
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):5 A
- Voltage - Collector Emitter Breakdown (Max):25 V
- Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
- Power - Max:1.4 W
- Frequency - Transition:65MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
