SI8823EDB-T2-E1
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 2.7A 4MICRO FOOT
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI8823EDB-T2-E1 Datasheet
-
ECAD Model
- Share
In Stock: 5,465
Can ship immediately
Pricing:
- 1$0.43
- 3,000$0.12773
- 6,000$0.11999
- 15,000$0.11224
- 30,000$0.10296
- 75,000$0.09909
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Technical Details
- Series:TrenchFET® Gen III
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:95mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):900mW (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
- Package / Case:4-XFBGA
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