IRFD9113

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:1.6Ohm @ 300mA, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:15 nC @ 15 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Through Hole
• Supplier Device Package:4-DIP, Hexdip, HVMDIP
• Package / Case:4-DIP (0.300", 7.62mm)