PSMN8R5-100ESQ
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PSMN8R5-100ESQ Datasheet
-
ECAD Model
- Share
In Stock: 1,608
Can ship immediately
Pricing:
- 1$0.57
- 50$0.46084
- 100$0.41472
- 500$0.32257
- 1,000$0.26727
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:8.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:111 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5.512 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):263W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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