IRFH5110TRPBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 11A/63A 8PQFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFH5110TRPBF Datasheet
-
ECAD Model
- Share
In Stock: 4,654
Can ship immediately
Pricing:
- 1$1.49
- 4,000$0.65789
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Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:11A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:12.4mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id:4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3152 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.6W (Ta), 114W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-PQFN (5x6)
- Package / Case:8-PowerVDFN
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