FJ4B01100L1

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:74mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 1.2mA

• Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:459 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):360mW (Ta)
• Operating Temperature:-40°C ~ 85°C (TA)
• Mounting Type:Surface Mount
• Supplier Device Package:XLGA004-W-0808-RA01
• Package / Case:4-XFLGA, CSP