SI4100DY-T1-GE3

Vishay / Siliconix
In Stock: 4,351

Can ship immediately

Pricing:
  • 1$1.38
  • 2,500$0.64663
  • 5,000$0.61627
  • 12,500$0.59458

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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:63mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 6W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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