NVTR01P02LT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSINGLE P-CHANNEL POWER MOSFET -2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NVTR01P02LT1G Datasheet
-
ECAD Model
- Share
In Stock: 10,169
Can ship immediately
Pricing:
- 1$0.07
- 3,000$0.07
- 6,000$0.06596
- 15,000$0.06192
- 30,000$0.05707
- 75,000$0.05504
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id:1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
- FET Feature:-
- Power Dissipation (Max):400mW (Ta)
- Operating Temperature:-
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3
- Package / Case:TO-236-3, SC-59, SOT-23-3
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