PMPB20EN,115

Rochester Electronics
In Stock: 8,142

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Pricing:
  • 1$0.07
  • 3,000$0.07

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:19.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:DFN2020MD-6
  • Package / Case:6-UDFN Exposed Pad

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