2SJ559-T1-A

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:13Ohm @ 10mA, 10V
• Vgs(th) (Max) @ Id:1.7V @ 10µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:5 pF @ 3 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:SC-75-3, USM
• Package / Case:SC-75, SOT-416