IPD50N04S408ATMA1

Rochester Electronics
In Stock: 2,501

Can ship immediately

Pricing:
  • 1$0.26
  • 2,500$0.26
  • 5,000$0.24207
  • 12,500$0.2331
  • 25,000$0.22821

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Technical Details

  • Series:OptiMOS™
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:7.9mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:4V @ 17µA

 

  • Gate Charge (Qg) (Max) @ Vgs:22.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1.78 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):46W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO252-3-313
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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