BSC097N06NSTATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionBSC097N06 - TRENCH 40<-<100V
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSC097N06NSTATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 9,636
Can ship immediately
Pricing:
- 1$0.36
- 5,000$0.36
- 10,000$0.34646
- 25,000$0.34449
Quote It
Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:13A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:9.7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:3.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.075 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):3W (Ta), 43W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TDSON-8-1
- Package / Case:8-PowerTDFN
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