IPS80R1K2P7AKMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 4.5A TO251-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPS80R1K2P7AKMA1 Datasheet
-
ECAD Model
- Share
In Stock: 4,680
Can ship immediately
Pricing:
- 1$0.41
- 10$0.36295
- 100$0.28693
- 500$0.22252
- 1,000$0.17567
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Technical Details
- Series:CoolMOS™ P7
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 500 V
- FET Feature:-
- Power Dissipation (Max):37W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO251-3-342
- Package / Case:TO-251-3 Stub Leads, IPak
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