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Technical Details

  • Series:*
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:32A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.25mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id:3V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:119 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7.77 pF @ 13 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 89W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PQFN (5x6)
  • Package / Case:8-PowerTDFN

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