IPI024N06N3GXKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 120A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPI024N06N3GXKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 676
Can ship immediately
Pricing:
- 1$3.15
- 10$2.84072
- 100$2.28289
- 500$1.77556
- 1,000$1.4712
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Technical Details
- Series:OptiMOS™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs:275 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO262-3-1
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
