FQD5N60CTM
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQD5N60CTM Datasheet
-
ECAD Model
- Share
In Stock: 167
Can ship immediately
Pricing:
- 1$0.36
- 2,500$0.24625
- 5,000$0.23462
- 12,500$0.22631
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Technical Details
- Series:QFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 49W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-Pak
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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