BSC060P03NS3EGATMA1

Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:17.7A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:6mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id:3.1V @ 150µA

• Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:6.02 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 83W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TDSON-8-1
• Package / Case:8-PowerTDFN