G2R1000MT17D

Technical Details

• Series:G2R™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1700 V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
• Vgs(th) (Max) @ Id:4V @ 2mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):+20V, -5V
• Input Capacitance (Ciss) (Max) @ Vds:139 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):53W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3