IRFHS8342TR2PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 8.8A/19A TSDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFHS8342TR2PBF Datasheet
-
ECAD Model
- Share
In Stock: 192
Can ship immediately
Pricing:
- 1$0.11
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:16mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 10 V
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):-
- Operating Temperature:-
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TSDSON-6
- Package / Case:6-PowerVDFN
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