BSS192PE6327

Technical Details

• Series:SIPMOS®
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):250 V
• Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
• Rds On (Max) @ Id, Vgs:12Ohm @ 190mA, 10V
• Vgs(th) (Max) @ Id:2V @ 130µA

• Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:104 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT89
• Package / Case:TO-243AA