STI6N80K5
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 4.5A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STI6N80K5 Datasheet
-
ECAD Model
- Share
In Stock: 149
Can ship immediately
Pricing:
- 1$1.04545
- 1,000$1.04545
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Technical Details
- Series:SuperMESH5™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.6Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
- Vgs (Max):30V
- Input Capacitance (Ciss) (Max) @ Vds:255 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):85W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK (TO-262)
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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