IRF5806
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 4A MICRO6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF5806 Datasheet
-
ECAD Model
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In Stock: 163
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:86mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:11.4 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:594 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:Micro6™(TSOP-6)
- Package / Case:SOT-23-6 Thin, TSOT-23-6
