STSJ100NHS3LL

Technical Details

• Series:STripFET™ III
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:4.2mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3W (Ta), 70W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOIC-EP
• Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad