IRF6607TR1

Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:27A (Ta), 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
• Rds On (Max) @ Id, Vgs:3.3mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:75 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:6930 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):3.6W (Ta), 42W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DIRECTFET™ MT
• Package / Case:DirectFET™ Isometric MT