IRF6710S2TRPBF

Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:12A (Ta), 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:5.9mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 25µA

• Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 13 V
• FET Feature:-
• Power Dissipation (Max):1.8W (Ta), 15W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DIRECTFET S1
• Package / Case:DirectFET™ Isometric S1