2SK3309(TE24L,Q)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 450V 10A TO220SM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SK3309(TE24L,Q) Datasheet
-
ECAD Model
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In Stock: 159
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):450 V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:650mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):65W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-220SM
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
