2N7635-GA
GeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS SJT 650V 4A TO257
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2N7635-GA Datasheet
-
ECAD Model
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In Stock: 125
Can ship immediately
Pricing:
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:-
- Technology:SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc) (165°C)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:415mOhm @ 4A
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 35 V
- FET Feature:-
- Power Dissipation (Max):47W (Tc)
- Operating Temperature:-55°C ~ 225°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-257
- Package / Case:TO-257-3
