GA06JT12-247

GeneSiC Semiconductor
In Stock: 125

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:-
  • Technology:SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc) (90°C)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:220mOhm @ 6A
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AB
  • Package / Case:TO-247-3

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