TK40J20D,S1F(O

Technical Details

• Series:π-MOSVIII
• Package:Tray
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):200 V
• Current - Continuous Drain (Id) @ 25°C:40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:44mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):260W (Tc)
• Operating Temperature:150°C
• Mounting Type:Through Hole
• Supplier Device Package:TO-3P(N)
• Package / Case:TO-3P-3, SC-65-3