BSD214SNH6327XTSA1

Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 3.7µA

• Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:143 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT363-6
• Package / Case:6-VSSOP, SC-88, SOT-363