PSMN5R3-25MLDX

Rochester Electronics
In Stock: 15,330

Can ship immediately

Pricing:
  • 1$0.15
  • 1,500$0.06814
  • 3,000$0.06212
  • 7,500$0.05812
  • 10,500$0.05411
  • 37,500$0.0513

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.9mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:12.7 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:858 pF @ 12 V
  • FET Feature:Schottky Diode (Body)
  • Power Dissipation (Max):51W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK33
  • Package / Case:SOT-1210, 8-LFPAK33

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