BSZ068N06NSATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionBSZ068N06 - 12V-300V N-CHANNEL P
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSZ068N06NSATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 126
Can ship immediately
Pricing:
- 1$0.36
- 5,000$0.15162
- 10,000$0.14592
- 25,000$0.14509
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:6.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:3.3V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.5 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):2.1W (Ta), 46W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TSDSON-8-FL
- Package / Case:8-PowerTDFN
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