SUG90090E-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 100A TO247AC
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SUG90090E-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 151
Can ship immediately
Pricing:
- 1$4.6
- 500$3.15175
- 1,000$2.68373
- 2,500$2.55772
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Technical Details
- Series:ThunderFET®
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
- Rds On (Max) @ Id, Vgs:9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:129 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5220 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):395W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247AC
- Package / Case:TO-247-3
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