TPCC8105,L1Q(CM
Toshiba Electronic Devices and Storage Corporation- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 23A 8TSON
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
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In Stock: 117
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Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:7.8mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id:2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
- Vgs (Max):+20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta), 30W (Tc)
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:8-TSON Advance (3.3x3.3)
- Package / Case:8-PowerVDFN
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