To solve the problems of large switching losses and the need for large-capacity electrolytic capacitances in three-phase DC/AC… [Read more]

Hafnium disulfide (HfS2) monolayer is one of the most promising two-dimensional (2D) materials for future nanoscale electronic devices… [Read more]

This work experimentally investigated the wake-up behaviors of hafnium oxide-based ferroelectric capacitors by manipulating… [Read more]

Since the initial introduction of the 3D NAND flash memory device structure reported in 2007… [Read more]

With the development of communication technology, the interference from passive intermodulation to the communication system has become increasingly severe.… [Read more]

The best design strategy for phase noise minimization of LC-resonant VCOs is to use a low inductance value… [Read more]